Part Number | SI8425DB-T1-E1 |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 10V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-WLCSP (1.6x1.6) |
Package / Case | 4-UFBGA, WLCSP |
Weight | - |
Country of Origin | - |