SI7862ADP-T1-GE3

SI7862ADP-T1-GE3 - Vishay Siliconix

Part Number
SI7862ADP-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 16V 18A PPAK SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI7862ADP-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
11329 pcs
Reference Price
USD 2.3993/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SI7862ADP-T1-GE3

SI7862ADP-T1-GE3 Detailed Description

Part Number SI7862ADP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 7340pF @ 8V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Rds On (Max) @ Id, Vgs 3 mOhm @ 29A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Weight -
Country of Origin -

RELATED PRODUCTS FOR SI7862ADP-T1-GE3