| Part Number | SI5913DC-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.7W (Ta), 3.1W (Tc) |
| Rds On (Max) @ Id, Vgs | 84 mOhm @ 3.7A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 1206-8 ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI5913DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 | Details |
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SI5915DC-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 8V 3.4A 1206-8 | Details |
