| Part Number | SI5519DU-T1-GE3 |
|---|---|
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 6.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
| Power - Max | 10.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI5513DC-T1 | VISHAYSIL | SI5513DC-T1 VISHAY/SIL POWERP.. New Original Stocks | Details |
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SI5513DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 | Details |
