SI3529DV-T1-GE3 Detailed Description
| Part Number |
SI3529DV-T1-GE3 |
| Part Status |
Obsolete |
| FET Type |
N and P-Channel |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
40V |
| Current - Continuous Drain (Id) @ 25°C |
2.5A, 1.95A |
| Rds On (Max) @ Id, Vgs |
125 mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
205pF @ 20V |
| Power - Max |
1.4W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package |
6-TSOP |
| Weight |
- |
| Country of Origin |
- |
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