SI3529DV-T1-GE3 - Vishay Siliconix

Part Number	SI3529DV-T1-GE3
Part Status	Obsolete
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	2.5A, 1.95A
Rds On (Max) @ Id, Vgs	125 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	205pF @ 20V
Power - Max	1.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	SI3529DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 40V 2.5A 6-TSOP	Details
	SI3529DV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 2.5A 6-TSOP	Details