SI3475DV-T1-GE3

SI3475DV-T1-GE3 - Vishay Siliconix

Part Number
SI3475DV-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 200V 0.95A 6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI3475DV-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4247 pcs
Reference Price
USD 0/pcs
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SI3475DV-T1-GE3 Detailed Description

Part Number SI3475DV-T1-GE3
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 950mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs 1.61 Ohm @ 900mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Weight -
Country of Origin -

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