| Part Number | SI3460DV-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI3460-E02-GM | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | Details |
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SI3460-E02-GMR | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | Details |
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SI3460-E03-GM | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | Details |
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SI3460-E03-GMR | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | Details |
 |
SI3460BDV | VIS | SI3460BDV VIS SOT-26 New Original Stocks | Details |
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SI3460BDV-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP | Details |
|
SI3460BDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP | Details |
|
Si3460DDV | Vishay | Si3460DDV Vishay TSOP-6 New Original Stocks | Details |
|
SI3460DDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 7.9A 6-TSOP | Details |
|
SI3460DV | VIS | SI3460DV VIS SOT-23.. New Original Stocks | Details |
