SI3460BDV-T1-E3 - Vishay Siliconix

Part Number	SI3460BDV-T1-E3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs	27 mOhm @ 5.1A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI3460-E02-GM	Silicon Labs	IC POWER MANAGEMENT CTLR 11VQFN	Details
SI3460-E02-GMR	Silicon Labs	IC POWER MANAGEMENT CTLR 11VQFN	Details
SI3460-E03-GM	Silicon Labs	IC POWER MANAGEMENT CTLR 11VQFN	Details
SI3460-E03-GMR	Silicon Labs	IC POWER MANAGEMENT CTLR 11VQFN	Details
SI3460BDV	VIS	SI3460BDV VIS SOT-26 New Original Stocks	Details
SI3460BDV-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP	Details
SI3460BDV-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP	Details
Si3460DDV	Vishay	Si3460DDV Vishay TSOP-6 New Original Stocks	Details
SI3460DDV-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 7.9A 6-TSOP	Details
SI3460DV	VIS	SI3460DV VIS SOT-23.. New Original Stocks	Details