SI1012X-T1-GE3

SI1012X-T1-GE3 - Vishay Siliconix

Part Number
SI1012X-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 20V 500MA SC89-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI1012X-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
45000 pcs
Reference Price
USD 0.1307/pcs
Our Price
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SI1012X-T1-GE3 Detailed Description

Part Number SI1012X-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±6V
FET Feature -
Power Dissipation (Max) 250mW (Ta)
Rds On (Max) @ Id, Vgs 700 mOhm @ 600mA, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490
Weight -
Country of Origin -

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