| Part Number | IRF634NLPBF |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 88W (Tc) |
| Rds On (Max) @ Id, Vgs | 435 mOhm @ 4.8A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IRF60B217 | Infineon Technologies | MOSFET N-CH 60V 60A | Details |
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IRF60DM206 | Infineon Technologies | MOSFET N-CH 60V 130A | Details |
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IRF60R217 | Infineon Technologies | MOSFET N-CH 60V 58A | Details |
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IRF610 | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | Details |
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IRF6100 | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIP-FET | Details |
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IRF6100PBF | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIPFET | Details |
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IRF610L | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | Details |
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IRF610LPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | Details |
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IRF610PBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | Details |
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IRF610S | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | Details |
