ES2B-E3/52T - Vishay Semiconductor Diodes Division

Part Number	ES2B-E3/52T
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	2A
Voltage - Forward (Vf) (Max) @ If	900mV @ 2A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	30ns
Current - Reverse Leakage @ Vr	10µA @ 100V
Capacitance @ Vr, F	18pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AA, SMB
Supplier Device Package	DO-214AA (SMB)
Operating Temperature - Junction	-55°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
ES2B	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 2A DO214AA	Details
ES2B M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Details
ES2B R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Details
ES2B-13	Diodes Incorporated	DIODE GEN PURP 100V 2A SMB	Details
ES2B-13-F	Diodes Incorporated	DIODE GEN PURP 100V 2A SMB	Details
ES2B-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AA	Details
ES2B-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AA	Details
ES2B-LTP	Micro Commercial Co	DIODE GEN PURP 100V 2A DO214AC	Details
ES2B-M3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AA	Details
ES2B-M3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AA	Details