TPN8R903NL,LQ - Toshiba Semiconductor and Storage

Part Number	TPN8R903NL,LQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs	8.9 mOhm @ 10A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-