TPN30008NH,LQ - Toshiba Semiconductor and Storage

Part Number	TPN30008NH,LQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	9.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	920pF @ 40V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs	30 mOhm @ 4.8A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPN30008NH,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 9.6A 8TSON	Details
TPN302	ST	TPN302 ST SOP-8 New Original Stocks	Details
TPN3021	STMicroelectronics	OVP TRIPOLAR NETWORK 28V 8-SOIC	Details
TPN3021RL	STMicroelectronics	THYRISTOR 28V 100A 8SOIC	Details