TPN1110ENH,L1Q Detailed Description
| Part Number |
TPN1110ENH,L1Q |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
200V |
| Current - Continuous Drain (Id) @ 25°C |
7.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs(th) (Max) @ Id |
4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
600pF @ 100V |
| Vgs (Max) |
±20V |
| FET Feature |
- |
| Power Dissipation (Max) |
700mW (Ta), 39W (Tc) |
| Rds On (Max) @ Id, Vgs |
114 mOhm @ 3.6A, 10V |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
8-TSON Advance (3.3x3.3) |
| Package / Case |
8-PowerVDFN |
| Weight |
- |
| Country of Origin |
- |
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