TPH4R606NH,L1Q - Toshiba Semiconductor and Storage

Part Number	TPH4R606NH,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	32A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	6.5V, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3965pF @ 30V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs	4.6 mOhm @ 16A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPH4R003NL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 63A 8SOP	Details
TPH4R008NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 80V 60A SOP ADV	Details
TPH4R10ANL,L1Q	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	Details
TPH4R50ANH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 100V 60A SOP ADV	Details
TPH4R606NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 60V 32A 8-SOP ADV	Details