TPC8129,LQ(S - Toshiba Semiconductor and Storage

Part Number	TPC8129,LQ(S
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1650pF @ 10V
Vgs (Max)	+20V, -25V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Rds On (Max) @ Id, Vgs	22 mOhm @ 4.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

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