TK90S06N1L,LQ - Toshiba Semiconductor and Storage

Part Number	TK90S06N1L,LQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	90A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	81nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	157W (Tc)
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 45A, 10V
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-