TK7A60W,S4VX - Toshiba Semiconductor and Storage

Part Number	TK7A60W,S4VX
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 300V
Vgs (Max)	±30V
FET Feature	Super Junction
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	600 mOhm @ 3.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack, Isolated Tab
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TK7A45DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 6.5A TO-220SIS	Details
TK7A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 7A TO-220SIS	Details
TK7A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 7A TO-220SIS	Details
TK7A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 7A TO-220SIS	Details
TK7A60W5,S5VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 7A TO-220SIS	Details
TK7A65D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 7A TO-220SIS	Details
TK7A65W,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 6.8A TO-220SIS	Details
TK7A90E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO220SIS	Details