TK60D08J1(Q)

TK60D08J1(Q) - Toshiba Semiconductor and Storage

Part Number
TK60D08J1(Q)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 75V 60A TO220W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK60D08J1(Q) PDF online browsing
Datasheet PDF Download
TK60D08J1(Q).pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4487 pcs
Reference Price
USD 0/pcs
Our Price
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TK60D08J1(Q) Detailed Description

Part Number TK60D08J1(Q)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5450pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Rds On (Max) @ Id, Vgs 7.8 mOhm @ 30A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220(W)
Package / Case TO-220-3
Weight -
Country of Origin -

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