TK3R1E04PL,S1X

TK3R1E04PL,S1X - Toshiba Semiconductor and Storage

Part Number
TK3R1E04PL,S1X
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK3R1E04PL,S1X PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1687 pcs
Reference Price
USD 1.92/pcs
Our Price
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TK3R1E04PL,S1X Detailed Description

Part Number TK3R1E04PL,S1X
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 63.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4670pF @ 20V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 87W (Tc)
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 30A, 4.5V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Weight -
Country of Origin -

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