TK3R1E04PL,S1X - Toshiba Semiconductor and Storage

Part Number	TK3R1E04PL,S1X
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	100A
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	63.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4670pF @ 20V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	87W (Tc)
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 30A, 4.5V
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Weight	-
Country of Origin	-

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