TK35A08N1,S4X

TK35A08N1,S4X - Toshiba Semiconductor and Storage

Part Number
TK35A08N1,S4X
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 80V 35A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK35A08N1,S4X PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
205 pcs
Reference Price
USD 1.16/pcs
Our Price
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TK35A08N1,S4X Detailed Description

Part Number TK35A08N1,S4X
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Rds On (Max) @ Id, Vgs 12.2 mOhm @ 17.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack, Isolated Tab
Weight -
Country of Origin -

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