TK33S10N1Z,LQ

TK33S10N1Z,LQ - Toshiba Semiconductor and Storage

Part Number
TK33S10N1Z,LQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 100V 33A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK33S10N1Z,LQ PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
36752 pcs
Reference Price
USD 0.7007/pcs
Our Price
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TK33S10N1Z,LQ Detailed Description

Part Number TK33S10N1Z,LQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 33A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 9.7 mOhm @ 16.5A, 10V
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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