TK28N65W,S1F

TK28N65W,S1F - Toshiba Semiconductor and Storage

Part Number
TK28N65W,S1F
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 650V 27.6A TO247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK28N65W,S1F PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
325 pcs
Reference Price
USD 6.28/pcs
Our Price
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TK28N65W,S1F Detailed Description

Part Number TK28N65W,S1F
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 27.6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 13.8A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Weight -
Country of Origin -

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