TK20C60W,S1VQ

TK20C60W,S1VQ - Toshiba Semiconductor and Storage

Part Number
TK20C60W,S1VQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 600V 20A I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK20C60W,S1VQ PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
95 pcs
Reference Price
USD 5.81/pcs
Our Price
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TK20C60W,S1VQ Detailed Description

Part Number TK20C60W,S1VQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Rds On (Max) @ Id, Vgs 155 mOhm @ 10A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Weight -
Country of Origin -

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