TK17A80W,S4X - Toshiba Semiconductor and Storage

Part Number	TK17A80W,S4X
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	17A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 300V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Rds On (Max) @ Id, Vgs	290 mOhm @ 8.5A, 10V
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TK17021LTL	TOKO	TK17021LTL TOKO SOT-8 New Original Stocks	Details
TK17030MTL	TOKO	TK17030MTL TOKO SOT-8 New Original Stocks	Details
TK17040MTL	TOKO	TK17040MTL TOKO SOT-8 New Original Stocks	Details
TK1705800000G	Amphenol Anytek	TERM BLK 17P SIDE ENTRY 5MM PCB	Details
TK17119FTL	TOKO	TK17119FTL TOKO SON8 New Original Stocks	Details
TK17A80W,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 17A TO220-3	Details
TK17E65W,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 17.3A TO-220AB	Details
TK17E80W,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 17A TO220-3	Details
TK17N65W,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 17.3A T0247	Details