TK12E60W,S1VX

TK12E60W,S1VX - Toshiba Semiconductor and Storage

Part Number
TK12E60W,S1VX
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N CH 600V 11.5A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK12E60W,S1VX PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
9598 pcs
Reference Price
USD 2.7226/pcs
Our Price
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TK12E60W,S1VX Detailed Description

Part Number TK12E60W,S1VX
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 300V
Vgs (Max) ±30V
FET Feature Super Junction
Power Dissipation (Max) 110W (Tc)
Rds On (Max) @ Id, Vgs 300 mOhm @ 5.8A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Weight -
Country of Origin -

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