TK11P65W,RQ

TK11P65W,RQ - Toshiba Semiconductor and Storage

Part Number
TK11P65W,RQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 650V 11.1A DPAK-0S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK11P65W,RQ PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
5000 pcs
Reference Price
USD 0.8732/pcs
Our Price
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TK11P65W,RQ Detailed Description

Part Number TK11P65W,RQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11.1A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Rds On (Max) @ Id, Vgs 440 mOhm @ 5.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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