TK10A60E,S4X

TK10A60E,S4X - Toshiba Semiconductor and Storage

Part Number
TK10A60E,S4X
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 600V TO220SIS
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK10A60E,S4X PDF online browsing
Datasheet PDF Download
TK10A60E,S4X.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
275 pcs
Reference Price
USD 1.8/pcs
Our Price
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TK10A60E,S4X Detailed Description

Part Number TK10A60E,S4X
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Rds On (Max) @ Id, Vgs 750 mOhm @ 5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack, Isolated Tab
Weight -
Country of Origin -

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