| Part Number | TK100E08N1,S1X |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 50A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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TK100A06N1,S4X | Toshiba Semiconductor and Storage | MOSFET N-CH 60V 100A TO-220 | Details |
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TK100A08N1,S4X | Toshiba Semiconductor and Storage | MOSFET N-CH 80V 214A TO220SIS | Details |
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TK100A10N1,S4X | Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO-220 | Details |
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TK100E06N1,S1X | Toshiba Semiconductor and Storage | MOSFET N CH 60V 100A TO-220 | Details |
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TK100E08N1,S1X | Toshiba Semiconductor and Storage | MOSFET N-CH 80V 100A TO220 | Details |
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TK100E10N1,S1X | Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO220 | Details |
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TK100L60W,VQ | Toshiba Semiconductor and Storage | MOSFET N CH 600V 100A TO3P(L) | Details |
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