SSM3K35MFV,L3F - Toshiba Semiconductor and Storage

Part Number	SSM3K35MFV,L3F
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4V
Rds On (Max) @ Id, Vgs	3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 3V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	VESM
Package / Case	SOT-723
Weight	-
Country of Origin	-

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