SSM3J35MFV,L3F

SSM3J35MFV,L3F - Toshiba Semiconductor and Storage

Part Number
SSM3J35MFV,L3F
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET P-CH 20V 0.1A VESM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SSM3J35MFV,L3F PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
40000 pcs
Reference Price
USD 0.0374/pcs
Our Price
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SSM3J35MFV,L3F Detailed Description

Part Number SSM3J35MFV,L3F
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 12.2pF @ 3V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 150mW (Ta)
Rds On (Max) @ Id, Vgs 8 Ohm @ 50mA, 4V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VESM
Package / Case SOT-723
Weight -
Country of Origin -

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