SSM3J306T(TE85L,F) - Toshiba Semiconductor and Storage

Part Number	SSM3J306T(TE85L,F)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Rds On (Max) @ Id, Vgs	117 mOhm @ 1A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSM
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SSM3J304T	TOSHIBA	SSM3J304T TOSHIBA SOT23 New Original Stocks	Details
SSM3J304T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2.3A TSM	Details
SSM3J304T(TE85LFM)	TOSHIBA	SSM3J304T(TE85LFM) TOSHIBA SOT-23 New Original Stocks	Details
SSM3J305T	TOS	SSM3J305T TOS SOT-23 New Original Stocks	Details
SSM3J306T	TOS	SSM3J306T TOS SOT-23 New Original Stocks	Details
SSM3J306T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 2.4A TSM	Details
SSM3J307T	TOS	SSM3J307T TOS TSM(2... New Original Stocks	Details
SSM3J307T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5A TSM	Details
SSM3J312T	TOS	SSM3J312T TOS TSM(2... New Original Stocks	Details
SSM3J313T	TOS	SSM3J313T TOS TSM(2... New Original Stocks	Details