RN1427TE85LF

RN1427TE85LF - Toshiba Semiconductor and Storage

Part Number
RN1427TE85LF
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PREBIAS NPN 200MW SMINI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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RN1427TE85LF PDF online browsing
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-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
241073 pcs
Reference Price
USD 0.1109/pcs
Our Price
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RN1427TE85LF Detailed Description

Part Number RN1427TE85LF
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 300MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Weight -
Country of Origin -

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