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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays › HN4B01JE(TE85L,F)
HN4B01JE(TE85L,F)

HN4B01JE(TE85L,F) - Toshiba Semiconductor and Storage

Part Number
HN4B01JE(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS NPN/PNP 50V 0.15A ESV PLN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
HN4B01JE(TE85L,F) PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
4040 pcs
Reference Price
USD 0/pcs
Our Price
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HN4B01JE(TE85L,F) Detailed Description

Part Number HN4B01JE(TE85L,F)
Part Status Active
Transistor Type NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10MA, 100MA
Power - Max 100mW
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package ESV
Weight -
Country of Origin -

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HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage TRANS NPN/PNP 50V 0.15A ESV PLN Details