CUS10F30,H3F - Toshiba Semiconductor and Storage

Part Number	CUS10F30,H3F
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	30V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	500mV @ 1A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	50µA @ 30V
Capacitance @ Vr, F	170pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	SC-76, SOD-323
Supplier Device Package	USC
Operating Temperature - Junction	125°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CUS10F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USC	Details
CUS10F40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A USC	Details
CUS10I30A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A US-FLAT	Details
CUS10I40A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A US-FLAT	Details
CUS10S30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USC	Details
CUS10S40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A USC	Details
CUS12	Curtis Industries	RELAY SOCKET 11 PIN	Details
CUS1205	POWER-ONE	1 WATT	Details
CUS1209	POWER-ONE	1 WATT	Details
CUS1212	POWER-ONE	1 WATT	Details