CUS10I30A(TE85L,QM - Toshiba Semiconductor and Storage

Part Number	CUS10I30A(TE85L,QM
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	30V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	390mV @ 700mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	60µA @ 30V
Capacitance @ Vr, F	50pF @ 10V, 1MHz
Mounting Type	Surface Mount
Package / Case	SC-76, SOD-323
Supplier Device Package	US-FLAT (1.25x2.5)
Operating Temperature - Junction	150°C (Max)
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	CUS10I30A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A US-FLAT	Details
	CUS10I40A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A US-FLAT	Details