2SK3309(Q)

2SK3309(Q) - Toshiba Semiconductor and Storage

Part Number
2SK3309(Q)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 450V 10A TO220FL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SK3309(Q) PDF online browsing
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2SK3309(Q).pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3842 pcs
Reference Price
USD 0/pcs
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2SK3309(Q) Detailed Description

Part Number 2SK3309(Q)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 450V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 10V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 65W (Tc)
Rds On (Max) @ Id, Vgs 650 mOhm @ 5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FL
Package / Case TO-220-3, Short Tab
Weight -
Country of Origin -

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