2SJ681(Q)

2SJ681(Q) - Toshiba Semiconductor and Storage

Part Number
2SJ681(Q)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET P-CH 60V 5A PW-MOLD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SJ681(Q) PDF online browsing
Datasheet PDF Download
2SJ681(Q).pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3924 pcs
Reference Price
USD 0/pcs
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2SJ681(Q) Detailed Description

Part Number 2SJ681(Q)
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4V, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 20W (Ta)
Rds On (Max) @ Id, Vgs 170 mOhm @ 2.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PW-MOLD2
Package / Case TO-251-3 Stub Leads, IPak
Weight -
Country of Origin -

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