2SJ610(TE16L1,NQ)

2SJ610(TE16L1,NQ) - Toshiba Semiconductor and Storage

Part Number
2SJ610(TE16L1,NQ)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET P-CH 250V 2A PW-MOLD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SJ610(TE16L1,NQ) PDF online browsing
Datasheet PDF Download
2SJ610(TE16L1,NQ).pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3565 pcs
Reference Price
USD 0/pcs
Our Price
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2SJ610(TE16L1,NQ) Detailed Description

Part Number 2SJ610(TE16L1,NQ)
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 381pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 20W (Ta)
Rds On (Max) @ Id, Vgs 2.55 Ohm @ 1A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PW-MOLD
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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