2SD2695,T6F(M

2SD2695,T6F(M - Toshiba Semiconductor and Storage

Part Number
2SD2695,T6F(M
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS NPN 2A 60V TO226-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SD2695,T6F(M PDF online browsing
Datasheet PDF Download
2SD2695,T6F(M.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3702 pcs
Reference Price
USD 0/pcs
Our Price
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2SD2695,T6F(M Detailed Description

Part Number 2SD2695,T6F(M
Part Status Last Time Buy
Transistor Type NPN
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 2V
Power - Max 900mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Weight -
Country of Origin -

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