2SD2257,KEHINQ(J - Toshiba Semiconductor and Storage

Part Number	2SD2257,KEHINQ(J
Part Status	Last Time Buy
Transistor Type	NPN
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 2A, 2V
Power - Max	2W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS
Weight	-
Country of Origin	-

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