1SV322(TPH3,F) - Toshiba Semiconductor and Storage

Part Number	1SV322(TPH3,F)
Part Status	Active
Capacitance @ Vr, F	7.1pF @ 4V, 1MHz
Capacitance Ratio	4.3
Capacitance Ratio Condition	C1/C4
Voltage - Peak Reverse (Max)	10V
Diode Type	Single
Q @ Vr, F	-
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-76, SOD-323
Supplier Device Package	USC
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
1SV322	KEXIN	Silicon Epitaxial Planar Diode	Details
1SV322(TPH3,F)	Toshiba Semiconductor and Storage	DIODE VARACTOR 10V USC	Details
1SV322TPH3F	TOSHIBA	1SV322TPH3F TOSHIBA SMD or Through Hole New Original Stocks	Details
1SV323,H3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 10V ESC	Details
1SV324	KEXIN	Silicon Epitaxial Planar Diode	Details
1SV324TPH3F	Toshiba Semiconductor and Storage	DIODE TCXO/VCO 10V USC	Details
1SV325,H3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 10V ESC	Details
1SV328	KEXIN	Silicon Epitaxial Planar Diode	Details