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Home › Product Categories › Integrated Circuits (ICs) › Memory › TC58NYG1S3HBAI4
TC58NYG1S3HBAI4

TC58NYG1S3HBAI4 - Toshiba Memory America, Inc.

Part Number
TC58NYG1S3HBAI4
Manufacturer
Toshiba Memory America, Inc.
Brief Description
2G NAND SLC 24NM BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TC58NYG1S3HBAI4 PDF online browsing
Datasheet PDF Download
-
Category
Memory
Delivery Time
1 Day
Date Code
New
Stock Quantity
34410 pcs
Reference Price
USD 5.32/pcs
Our Price
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TC58NYG1S3HBAI4 Detailed Description

Part Number TC58NYG1S3HBAI4
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 2Gb (256M x 8)
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time -
Memory Interface -
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)
Weight -
Country of Origin -

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