TSM600N25ECH C5G - Taiwan Semiconductor Corporation

Part Number	TSM600N25ECH C5G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	423pF @ 25V
FET Feature	-
Power Dissipation (Max)	52W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TSM600-250-2	Littelfuse Inc.	POLYSWITCH 0.250A HOLD SMD	Details
TSM600-250-RA-2	Littelfuse Inc.	POLYSWITCH 0.250A HOLD SMD	Details
TSM600-250F-2	Littelfuse Inc.	POLYSWITCH 250V 250MA HOLD SMD	Details
TSM600-250F-RA-2	Littelfuse Inc.	POLYSWITCH 250V 250MA HOLD SMD	Details
TSM600-400F-2	Littelfuse Inc.	POLYSWITCH PTC RESET .400A	Details
TSM600N25ECH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 250V 8A TO251	Details
TSM600P03CS RLG	Taiwan Semiconductor Corporation	MOSFET P-CHANNEL 30V 4.7A 8SOP	Details