GBL10HD2G - Taiwan Semiconductor Corporation

Part Number	GBL10HD2G
Part Status	Active
Diode Type	Single Phase
Technology	Standard
Voltage - Peak Reverse (Max)	1kV
Current - Average Rectified (Io)	4A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 4A
Current - Reverse Leakage @ Vr	5µA @ 1000V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	4-SIP, GBL
Supplier Device Package	GBL
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GBL005	GeneSiC Semiconductor	DIODE BRIDGE 50V 4A GBL	Details
GBL005 D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 4A GBL	Details
GBL005-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 50V GBL	Details
GBL005-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 50V GBL	Details
GBL005HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 4A GBL	Details
GBL005_1	TSC	Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers	Details
GBL01	GeneSiC Semiconductor	DIODE BRIDGE 100V 4A GBL	Details
GBL01 D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 4A GBL	Details
GBL01-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 100V GBL	Details
GBL01-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 100V GBL	Details