STU11NM60ND - STMicroelectronics

Part Number	STU11NM60ND
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 50V
Vgs (Max)	±25V
FET Feature	-
Power Dissipation (Max)	90W (Tc)
Rds On (Max) @ Id, Vgs	450 mOhm @ 5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
STU1030PL	SAMHOP	STU1030PL SAMHOP TO252 New Original Stocks	Details
STU10N60M2	STMicroelectronics	MOSFET N-CH 600V IPAK	Details
STU10NM60N	STMicroelectronics	MOSFET N-CH 600V 10A IPAK	Details
STU10NM65N	STMicroelectronics	MOSFET N-CH 650V 9A IPAK	Details
STU10P6F6	STMicroelectronics	MOSFET P-CH 60V 10A IPAK	Details
STU11N65M2	STMicroelectronics	MOSFET N-CH 650V 7A IPAK	Details
STU11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A IPAK	Details
STU1224N	SAMHOP	STU1224N SAMHOP TO252 New Original Stocks	Details
STU1255PL	SAMHOP	STU1255PL SAMHOP TO252 New Original Stocks	Details
STU12L01	S	STU12L01 S TO-252 New Original Stocks	Details