STN1N20 - STMicroelectronics

Part Number	STN1N20
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	206pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.9W (Tc)
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
Weight	-
Country of Origin	-

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