R8002ANJFRGTL - Rohm Semiconductor

Part Number	R8002ANJFRGTL
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
FET Feature	-
Power Dissipation (Max)	62W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LPTS
Package / Case	SC-83
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	R8002ANJFRGTL	Rohm Semiconductor	R8002ANJ FRG IS A POWER MOSFET W	Details
	R8002ANX	Rohm Semiconductor	MOSFET N-CH 800V 2A TO-220FM	Details