RQJ0303PGDQA#H6

RQJ0303PGDQA#H6 - Renesas Electronics America

Part Number
RQJ0303PGDQA#H6
Manufacturer
Renesas Electronics America
Brief Description
MOSFET P-CH 30V 3.3A 3MPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RQJ0303PGDQA#H6 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3760 pcs
Reference Price
USD 0/pcs
Our Price
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RQJ0303PGDQA#H6 Detailed Description

Part Number RQJ0303PGDQA#H6
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 10V
Vgs (Max) +10V, -20V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Rds On (Max) @ Id, Vgs 68 mOhm @ 1.6A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-MPAK
Package / Case TO-236-3, SC-59, SOT-23-3
Weight -
Country of Origin -

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