NP180N04TUK-E1-AY - Renesas Electronics America

Part Number	NP180N04TUK-E1-AY
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.05 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	297nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	15750pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 348W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
NP180N04TDG	NEC	NP180N04TDG NEC TO-263.. New Original Stocks	Details
NP180N04TUG	NEC	NP180N04TUG NEC TO263-.. New Original Stocks	Details
NP180N04TUG-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 180A TO-263-7	Details
NP180N04TUJ-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 180A TO-263-7	Details
NP180N04TUJ-E2-AY	Renesas Electronics America	TRANSISTOR	Details
NP180N04TUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 180A TO-263	Details
NP180N055TUJ-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 180A TO-263-7	Details
NP180N055TUJ-E2-AY	Renesas Electronics America	TRANSISTOR	Details
NP180N055TUK-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 180A TO-263	Details